Fernando Ponce

Title: 
Professor
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Prof. Ponce’s research group is involved in the study of the microscopic properties of semiconductors materials. The atomic arrangement at extended defects (dislocations) and interfaces is analyzed using lattice-imaging techniques (transmission electron microscopy) with resolutions below 0.2nm, and diffraction contrast imaging techniques. The electronic properties are studied using electron beam induced current imaging. Variations of the electrostatic potential are measured using electron holography in the transmission electron microscopy. Optical transitions are observed using cathodoluminescence spectroscopic imaging. An important area of interest is the physics of nitride semiconductors. These are GaN-based materials used in light emitting devices, and include InGaN and AlGaN alloys used for visible and ultraviolet LEDs and laser diodes. This research is being supported by the Department of Energy, the National Science Foundation, and DARPA.

Home Dept: 
Arizona State University Department of Physics
Home Dept URL: 
Arizona State University Department of Physics
Category: 
Faculty
Office Hours: 
Monday: 10:00 AM - 11:00 AM
Wednesday: 10:00 AM - 11:00 AM
Degree Info: 
Ph.D., Stanford University
Area of Study: 
Wide-gap semiconductors for applications in solid state lighting and photovoltaics
CV: 
application/pdf iconPonce - CV.pdf
Phone: 
(480) 965-5557

Selected Publications

R. Garcia, B. Ren, A. C. Thomas, and F. A. Ponce . 2009 . Measurement of the solubility of ammonia and nitrogen in gallium at atmospheric pressure. Journal of Alloys and Compounds . R. Garcia, B. Ren, A. C. Thomas, and F. A. Ponce . 467 . 611-613
A. M. Fischer, Z. H. Wu, K. W. Sun, Q. Y. Wei, Y. U. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce . 2009 . Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN . Applied Physics Express . 2 . 041002
R. Li, J. M. Zhang, L. Chen, H. Zhao, Z. Yang, T. Yu, D. Li, Z. C. Liu, W. H. Chen, Z. J. Yang, G. Y. Zhang, Z. Z. Gan, X. D. Hu, Q. Y. Wei, T. Li, and F.A. Ponce . 2009 . Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure . Applied Physics Letters . 94 . 211103
J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, M. A. Moram and C. J. Humphreys, C. Vierheilig, and U. T. Schwarz . 2009 . Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multi-heterostructures grown by MOVPE . Journal of Applied Physics . 106 . 013720
J. N. Dai, X. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce, and C. Q. Chen . 2009 . Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers . Journal of Electronic Materials . 38 . 1938-1943
F. A. Ponce, Z. H. Wu, Q. Y. Wei, H. D. Fonseca-Filho, C. M. Almeida, R. Prioli and D. Cherns . 2009 . Nanoscale dislocation patterning by scratching in an atomic force microscope . Journal of Applied Physics . 106 . 076106
Q. Y. Wei, Z. H. Wu, K. W. Sun, F. A. Ponce, J. Hertkorn, and F. Scholz . 2009 . Evidence of two-dimensional hole gas in p-type AlN/GaN heterostructures . Applied Physics Express . 2 . 121001
A. M. Fischer, S. Srinivasan, F. A. Ponce, B. Monemar, F. Bertram, and J. Christen . 2008 . Time-resolved cathodoluminescence of Mg doped GaN . Applied Physics Letters . 93 . 1551901
C. M. Almeida, R. Prioli, and F. A. Ponce . 2008 . Effect of native oxide mechanical deformation on InP nanoindentation . Journal of Applied Physics . 104 . 113509
Z. H. Wu, F. A. Ponce, J. Hertkorn, and F. Scholz . 2007 . Determination of the electronic band structure for a graded modulation-doped AlGaN/AlN/GaN superlattice . Applied Physics Letters . 91 . 142121

Research Interests

Atomic-resolution transmission electron micrograph of the AlN/SiC interface. F. A. Ponce et al. Phys. Rev. B. 53, 7473 (1996)

Semiconductors used for light emitting devices. F. A. Ponce and D. P. Bour, Nature 386, 351 (1997)