Resistance vs probe separation for 60nm wide CoSi2 NW on Si(110) using multi-tip STM instrument. The slope of this line yields a resistivity of rho = 31 pm 9 micro-ohm-cm.
Peter Bennett
Title:
Professor
Professor Bennett’s group studies the structure and kinetics of metals on silicon surfaces (silicides) using a variety of ultra-high vacuum techniques, including scanning tunneling microscopy (STM), low energy electron microscopy (LEEM) and surface X-ray diffraction (SXRD). The aim is to identify useful structures, and to quantify the fundamental parameters that affect overlayer growth including surface diffusion, binding energies to steps and islands and interlayer transport. These studies will improve the fundamental understanding of metal/silicon surface reactions, which are key to development of novel silicon-based nanoelectronics.
Research Page:
Home Dept:
Department of Physics
Home Dept URL:
Category:
Faculty
Office Hours:
Monday: 10:00 AM - 11:00 AM
Tuesday: 10:00 AM - 11:00 AM
Wednesday: 10:00 AM - 11:00 AM
Thursday: 10:00 AM - 11:00 AM
Friday: 10:00 AM - 11:00 AM
Degree Info:
Ph.D., University of Wisconsin-Madison
Area of Study:
Experimental Surface Science
Phone:
(480) 965-9623
Selected Publications
.
2007 .
Steering of Pt-Si Liquid Nanodroplets on Si(100) by Interactions with Surface Steps .
Phys. Rev. Lett. .
99 .
125504-8
.
2005 .
In Situ Resistance Measurement of Epitaxial Cobalt Silicide Nanowires on Si(110) .
Appl. Phys. Lett. .
86 .
233108
Research Interests
Variable-spacing resistance can also be measured with a conventional STM, using an evaporated macro-contact for one probe, as shown here. These data are for a 20nm wide FeSi2 NW on Si(110). The slope of this line yields a resistivity of rho = 800pm100 micro-ohm-cm
Metallic contacts to a semiconductor will naturally form a Schottky barrier. In the case of nanoscale contacts (point contact, in the limit), the built-in field at the Schottky contact is determined by the geometry of the contact rather than doping of the semiconductor, as shown in the Figure Schematic of Schottky Point Contact (SPC) showing a) geometry of contact b) band-bending diagram c) contour plot of conduction band edge from SILVACO-ATLAS numerical simulation, using parameters for CoSi2 on Si(111) with a strongly-pinned surface Fermi level.
