Ig Tsong - Professor Emeritus

The research areas specialized by Ig Tsong are the physics of semiconductor surfaces and the growth of new wide bandgap semiconductors. Nineteen graduate students have successfully completed their PhD dissertations in his laboratory. His current research interest lies in the growth of Group III nitride semiconductors on silicon substrates and the fabrication of light emitting devices. To this end, he is collaborating with researchers from Nitronex Corporation in Raleigh, North Carolina, and from Sandia National Laboratory in Albuquerque, New Mexico. His research students, both graduate and undergraduate, undertake training in laboratory research as well as in commercialization and entrepreneurship. During his career, Ig Tsong has published over 200 articles in peer-review journals and book chapters. The h-index of his publications is 32 as of 2007.

Ph.D., Univ. of London, 1970
D.Sc., Univ. of Leeds, 1989
Area of Study: Experimental Surface Physics
Office Room: PSB 249
Phone: (480) 965-3563

Selected Publications

Z.T. Wang et al. . 2006 . Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular beam epitaxy . J. Appl. Phys. . 100 . 033506
P.-L. Liu et al . 2005 . First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001) . Phys. Rev. B . 72 . 245335
Y. Yamada-Takamura et al . 2005 . Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers . Phys. Rev. Lett. . 95 . 266105

Research Interests

High-resolution cross-sectional transmission electron microscopy images of perfectly coherent GaN quantum dots grown on a 6H-SiC(0001) substrate.