Nicole Herbots

Bateman Physical Sciences H-Wing
568
TEMPE
Emeritus Professor
Faculty
Mailcode

Biography

Professor Emeritus , Ph.D., University Catholique De Louvain, Condensed Matter, Materials and Solid State Physics

Office - PSH 351, Phone - (480) 965-0581

E-mail - nicole.herbots@asu.edu

Classes taught at ASU:  Undergraduate Classes: I developed "Studio Physics" for teaching  calculus-based University Physics to non-majors in an interactive, highly engaging discussion format with large enrollment classes with 100 (2000-01), 200 (2003-04), and 300 (2004-05) students. This includes using both technology such as in-class personal response systems (PRS) with live display and low cost, small tech "desk experiments" during lectures. "Studio Physics" involvies for example having each student bend repeatedly a paper clip to physically experience the heat release under his/her fingers and experience physically the hardening from atomic bond breaking - to achieve an actual sensorial observation of the physical work as opposed to only remote computer simulations or demonstrations.  Studio Physics consists also in having the whole class drop his/her pencil from varying heights (low, mid, heigh) above their desk to explore the  relationship between potential energy and the role of spatial location/configuration in a potential such as the gravitational potential of the earth, and direct observation of energy conservation as the velocity and kinetic energy of the pens is seen to increase with drop height and increasing initial potential energy.  "Studio Physics" is implemented for Calculus based University Physics for Engineers, Chemists and Majors, for first semester I (Mechanics) PHY 121,  second semester II (Electricity & Magnetism), PHY 131, and  third/fourth III (Modern Physics) PHY 361. It arose in part from the NSF-funded Foundation Coalition for A Better Engineering Education , which integrated Math, Physics, Engineeing 101, and English 101 for first year engineering students cohorts, I also taught Advanced Physics Laboratory PHY 334, Graduate Classes: Graduate Solid State Physics PHY 581,  NSF funded Multidisciplinary course on Materials Synthesis & Processing PHY/MSE/CHM 391, Physics Laboratory Research for the gifted students PHY 499 (Individualized Instruction), PHY495 (Undergraduate Research Project) PHY 592 (Master Thesis Research) 4, PHY 794 (Graduate Research seminar),PHY 792 (Graduate Thesis Research) - Advanced Ion Beam Analysis Seminar: Combining MeV Ion Channeling and Nuclear Resonance Energy Profiling

Classes taught at MIT in Course III Department of Materials Science & Engineering:  Graduate Classes:  (1) Electronic Devices and Materials, (2) Electronic Materials Processing, (3) IAP "Growing Materials Atom-by-Atom" Advanced Molecular Techniques for Surface and Thin Film Synthesis and Processing, (Molecular Beam Epitaxy, Chemical Vapor Deposition, Ion Implantation, Ion Beam Depostion, etc..) and "Looking at Materials Atom-by-Atom: Advanced Molecular Techniques for Surface and Thin Film Characterization. Undergraduate Classes: Electronic Materials Processing Laboratory in a teaching clean-room.

BIO-Narrative: Nicole Herbots, i.r., PhD UCL, doctor ingenieur, joined ASU's Department of Physics & Astronomy in 1991 ,after 4 years as a faculty at MIT (1987-1991), and 3.5 years as research scientist in the Solid State Division at Oak Ridge National Laboratory (1984-1987). She is presently a professor emeritus in Physics at ASU. She is an inventor who holds multiple patents in semiconductors, medical electronics, molecular inorganic and organic nanophases and nanoscale technology. She is also a science educator who won a teaching award from engineering students for her development of interactive in-class and desktop experiments to teach fundamental and quantum physics concepts to undergraduates, and for her use of technology and whiteboards. She was an IBM Professor of Electronic Materials and a Carl Soderberg professor at MIT and a researcher in the Particle-Solid Interactions in the Solid State Division at Oak Ridge National Lab.

She founded and directs at ASU the Combined Ion & Molecular Deposition and SiO2 Laboratories. She earned her doctorate in Applied Physics at the Université Catholique de Louvain, where her work involved 3 departments – Condensed Matter Physics, Nuclear Physics (UCL Cyclotron facility), and Electrical Engineering (UCL clean-room WINFAB).

Her students research & model low temperature (T<480 K) synthesis of new semiconductor nanophases such as sub-nanometer ordered silicon dioxides (US Patent 6,613,677) & SiGeO2 (US patent 5,124,421).

Her methods, CIMD (US Patent 4,800,200) combines molecular beams, Ion Beam Deposition, Ion Beam Oxidation & Nitridation, & new low temperature (T ≤ 200° C) techniques such as the Herbots-Atluri Clean, the EpOX™ process, EpOxNOx™ and SilOxSi(S)™ to produce templates for (hetero) epitaxy in her clean-room laboratory, "nanostacks" of ultrathin films to create high performance gate oxides, peroskvites and photovoltaic surfaces and wafer bonding.

Her most recent technology disclosures are at the boundary of condensed matter physics, biology and medical electronics, with applications in medical devices implants such as integrated single device medical implants and InterOcular Lenses (IOL's) used in cataract surgery to replace clouded natural lenses and restore the ability to focus eye vision.

In physics instruction research,

N. Herbots implemented the Peer instruction method developped by Erik Mazur at Harvard University starting as early in 1993 in large enrollment physics classes (270 students) using recitations and hands-on experiments in Modern Physics.  In 1997, engineering students awarded her a Physics instruction award for this innovation.

In 1998-1999, N. Herbots integrated further the Physics Modellng approach in her NSF-Foundation Coalition class, included whiteboarding during lectures, and added the Energy Conservation-thread and Materials/Atomc model-thread to build curriculum narratives. She also used on-line homework submission and class-room computers for real-time individualized discussions with students. She also systematically integrated outcomes instruments (FCI, MBT, CSEM) for students and instructors (RTOP) for each course.

In 2000-2001, with support for ACEPT, N. Herbots introduced desk-stop experiments and Personal Response systems (individual clickers) to large lectures in physics while developping a new series of desk-stop experiments for electricity & magnetism. 

In 2003-2004, she introduced for the first time the use of on-line homework tutorials, conceptual and quantitative physics problem-solving with Mastering Physics.

LABORATORY FACILITIES CONSTRUCTED WHILE AT ASU:

1) N. Herbots' Combined Ion and Molecular Deposition/SiO2 Class 100 Clean Room Laboratory has an area of 400 square feet. It includes among others

- a new 16" wafer compatible and recently upgraded class 10  Wet Chemical Processing Laminar Flow Hood, where RCA cleaning, Herbots-Atluri Cleaning (US patent 6,613,677) , Langmuir-Blodgett molecular film formation, wafer bonding between Si-based materials, and nano-phase & interphase synthesis can be conducted, including commensurate beta-crystobalite on (1x1) Si(100) at 300 K.

- an newly upgraded hazardous materials, HF compatible customized glove-box made exclusively of polyproylene and teflon, with an 8 cubic feet  vented loadlock, and a 24 cubic feet work volume totally contained and vented to an acid hood, where a controlled atmosphere of nitrogen, oxygen, helium, argon or forming gas can be used for Langmuir-Blodgett molecular film formation, wafer bonding between Si-based materials, and nano-phase & interphase synthesis can be conducted, including commensurate beta-crystobalite on (1x1) Si(100) at 300 K

- a three-chambered UHV system with a loadlock, annealing chamber, controlled atmosphere loading, 6  simulatenous deposition sources (CIMD 40 cc Si and Ge, Boron K-cell, CIMD carbon, and a triple oven metal depostion source including Titanium, 

The CIMD portion of the CIMD/SIO2 lab can be toured virtually at http://ceaspub.eas.asu.edu/phy132/herbots.htm, thr SiO2/Bio-Medical Materials Synthesis and Characterization Laboratory can be toured at www.SiO2WaferBonding.com, www.SiO2BioMolecularFilms.com, www.SiO2HydroAffinity.com and www.SiO2MEIS.com

The IBeam User facility where the CIMD and some of the SiO2/Wafer Bonding/SiO2HydroAffinity facilities are located can be toured at http://www.ibeam.asu.edu/ 

Synthesis and Processing instrumentation description is described in several US Patents including 6,613,677 (granted 9/2/03), 5,241,214, 4,800,100 and the 6 patents listed below.

PROFESSIONAL EXPERIENCE 

Massachusetts Institute of Technology  janvier 1987 à août 1991

IBM Professor of Electronic Materials, Course III, DMSE

Carl SodeBerg Professor of Materials Science & Engineering (Dpt of Mat Sci & Eng)

Research: Modelling, Computer Simulations, Experimentation and Surface Analysis via Scanning Tunneling Microscopy (STM) of direct Ion Beam Deposition (IBD), Ion Beam Oxidation (IBO), Ion Beam Nitridation (IBN) and Combined Ion Molecular Deposition (CIMD, US Patent 4,800,100.

Design and Construction of a multi-chambered UHV Combined Ion and Molecular Deposition (CIMD) and class 100 clean-room including in-situ angular resolved X-ray Photoelectron Spectrometry (XPS), a.k.a as ESCA.

Surface, Interface and Thin Film analysis via Rutherford Backscattering Spectrometry (RBS) combined with Ion Channeling and the 3.045±0.005 MeB alpha(016,O16)alpha Nuclear Resonance Analysis (NRA), 200 keV Transmission Electron Microscopy (TEM) in plane view and cross-section, X-ray rocking curve crystal and thin film strain analysis, Secondary Ion Mass Spectroscopy (SIMS) of IBD

Oak Ridge National Laboratory - Solid State Division, Particle-Solid Interaction Group/SMAC Facility

Research Scientist · septembre 1984 à janvier 1987 · Oak Ridge, Tennessee

RESEARCH: 5 eV -1 keV very low energy Direct Ion Beam Deposition (IBD) of thin isotopic semiconductors films, superlattices and ultra-thin room temperature oxides on Si(100), including amorphous, poylcrystalline and (hetero)epitaxial Si30 and Ge74.

EDUCATION: 

Université catholique de Louvain    PhD in Applied Physics, Microelectronic Science · 

I.R.S.I.A Doctoral Fellow · août 1981 à septembre 1984 ·Louvain-la-Neuve

3-year doctoral research in Applied Physics, in the Science of Microelectronics: Thin/Film IC processing in the Electrical Engineering Class 100 clean-room with  Prof. Van de Wiele, Ion Beam Analysis on the RBS line at the UCL Van der Graaff accelerator in the Cyclotron with Prof. Grégoire, and Auger Electron Spectroscopy and Scanning Microscopy with Porf. Bertrand

Metal/Semiconductor interfaces, polysilicon, MOS structures, doping, Rutherford Backscattering Spectrometry, Channeling, Auger Electron Spectroscopy, Transmission and Scanning Electron Micscopy, IC fabrication of electrical testing structures for ohmic contact resistances

Université catholique de Louvain Engineer in Applied Physics, Senior Thesis:

"Design, Construction and Testing of Rutherford Backscattering Vacuum Chamber and beamlime and Testing with As-doped Si(100) via Ion Implantation and Au films on Si(100)

Prof. Herbots sample Class web pages can be seen at:
PHY 121 http://phyastweb.la.asu.edu/classes/phy121-herbots/
PHY 131 http://phyastweb.la.asu.edu/phy131-herbots/
PHY 334 http://phyastweb.la.asu.edu/phy334-herbots/

Selected PUBLICATIONS

 Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis​ S. R. NarayanJ. M. DayH. L. ThinakaranN. HerbotsM. E. BertramC. E. CornejoT. C. DiazK. L. KavanaghR. J. CulbertsonF. J. ArkS. RamM. W. MangusR. Islam. (2018)MRS Advances 100, 1-12.

Infrared spectroscopic analysis of an ordered Si/SiO2 interface  K. T. Queeney N. HerbotsJustin M. Shaw,  V. AtluriY. J. Chabal Appl. Phys. Lett. 84, 493 (2004); https://doi.org/10.1063/1.1644030

Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements. Qian Xing, N. Herbots, M. Hart, J. D. Bradley, B. J. Wilkens, D. A. Sell, Clive H. Sell, Henry M.  Kwong Jr, R. J. Culbertson, and S. D. Whaley,   AIP Conference Proceeding of the  International Conference on the Application of Accelerators in Research and Industry (CAARI), Vol . 1336 pp. 201-207 (May 2011) DOI:10.1063/1.3586089

Particle-.Induced X-Ray Emission (PIXE) Of Silicate Coatings On High Impact Resistance Polycarbonates Qian Xing, M. A. Hart, R. J. Culbertson, J. D. Bradley, N. Herbots, Barry J. Wilkens, David A. Sell, Clarizza Fiel Watson:  06/2011; 1336. DOI:10.1063/1.3586109

IBMM of OH adsorbates and interphases on Si-based materials. N. Herbots, Qian Xing, M. Hart, J.D. Bradley, D.A. Sell, R.J. Culbertson, Barry J. Wilkens:  Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2012); 272:330–333. DOI:10.1016/j.nimb.2011.01.09

New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation O. VancauwenbergheO. C. HellmanN. Herbots, and W. J. Tan Appl. Phys. Lett. 59, 2031 (1991); https://doi.org/10.1063/1.106122

 Ion Beam Deposition of Materials At 40– 200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation.  N. Herbots, B.R. Appleton, S.J. Pennycook, T.S. Noggle, R.A. Zuhr: MRS Online Proceeding Library 01/2011; 51. DOI:10.1557/PROC-51-369

Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion.Nicole Herbots, D. Gloesener, E. J. Van Loenen, A. E. M. J. Fischer:  MRS Online Proceeding Library 01/2011; 37. DOI:10.1557/PROC-37-613

 

 

Fax

480-965-7954

Education

Jul 1981  Sep 1984

Universit� Catholique de Louvain

Doctor of Philosophy, Applied Physics & Engineering, In the Science of Microelectronics

Louvain-la-Neuve, Belgium

Sep 1976  Sep 1981

Universit� Catholique de Louvain

Bachelor of Science & Engineering, Engineering And Applied Physics

Louvain-la-Neuve, Wallonia, Belgium

Research Interests

1) N. Herbots's facilities & Personal LABORATORIES at ASU:

 " ASU USER's FACILITY for     

 

 

 

Ion Beam Analysis of Materials (IBeAM), built 

by Prof. J.W. Mayer (emeritus), Prof. R.J. Culbertson (former director) and Prof. N. Herbots in 1993,

maintained and upgraded by Academic Professional Barry Wilkens

 

 

 

 

 

 

  

(see the following link for a lab tour by Prof. Culbertson, Wilkens or myself, for applying for access, submitted request for samples analysis by one of our researchers or AP, or signing up for a research account and IBA training, or schedule user's time:  http://lecsss.asu.edu/ibeam,

Prof. Culbertson and Barry Wilkens offer with the LE-CSSS a yearly FREE Ion Beam Analysis workshop in May.

The 2400 square feet IBeAM facility and its 2.1 MeV Tandem Accelerator (requies radiation safety training for user access)

is located in

LeRoy Eyring Center for Solid State Science

 

which houses IBeAM in a three-bay laboratory specifically designed for supporting the weight and maintain the alignement of the beam-lines. 

  The GW B38-36-34 laboratory hall provides 2400 square feet of space, and the necessary utilities:

" 2 x 2400 Amps at 220 V,

" 2 MOhms DI water, dry Nitrogen, compressed air, positive pressure,

" 2 chemical hoods with individual exhausts for either corrosive or explosive chemicals,

" closed-loop heat exchanger for CIMD/MBE UHV 3-chambered system in the SiO2/CIMD facility

" 18 MOhms DI water system and access,  

" Liquid Nitrogen storage, high purity dry nitrogen Liquid N2 exhaust (0.9999) in the basement of the Goldwater Research Center.

" THE ASU  SiO2/CIMD Class 100 clean-room with 4,800 CFM HEPA filtered air flowing into the IBeAM is INTEGRATED to THE IBEAM, 

Located inside room B38A, and B38A1 via a curtained, class 1000 stairwell access, the SiO2/Combined Ion and Molecular Deposition Laboratory benefits from direct interfacing between the analytical capabilities of the IBeAM facility (RBS, Ion Channeling, Nuclear Resonance Analysis, PIXE (Particle-Induced X-ray Emission), X-ray diffraction, sample preparation, cutting, annealing and pre-cleaning). 

 

In other words, samples/wafers can be easily transferred from the clean-room, EpOxNox chemical laminar flow hood and CIMD system into the IBA UJV or controlled atmosphere chambers for analysis.

 

Also called the "SiO2/CIMD lab"

 

(Founder & Director: Prof. Nicole Herbots  )

 

The SiO2/CIMD  lab is contained in a raised floor 20'x20'x10' class 100 Research Clean Room,

 

with a 10'x5'x10' loadlocked entry with air curtain, tacky mats, complete Class 10 suiting, with in addition complete acid protective gear (Acid aprons with full lenght sleeves, boots, face shields, respirators and double gloving).

 

 

http://enpub.fulton.asu.edu/phy132/herbots.htm

 

Between 2008 and 2010, the SiO2 CIMD lab received a $30,000k Strategic Initiative Award from the Arizona Board of Regents based on the IP output of CIMD research.

B

etween 2001 and 2011, the SiO2/CIMD lab has generated 10 technology disclosures, 7 provisional patent applications, 

7 utility patents applications.  

This has resulted in 2 US/International Patents being granted, 2 utility patents filed, 2 provisional patents pending and 2 commercial licenses.  The ABOR award has enabled an upgrade of our customized  EpOxNox" wet chemical lamimar food and controlled atmosphere glove box (Class 1) to handle wafers from 1" to 16" for research and technlogy in the following area's:

" Si-Silica Wafer bonding, Nano-Bonding, Epitaxial oxides on Si(100), Atomic smoothing of Si and Si oxides,

" Low Energy Ion Beam Oxidation/Nitridation,

" Combined Ion Molecular Deposition (CIMD), Molecular Beam Epitaxy (MBE) of SiGe, SiGeC, Erbium and Titanium silicides.

 

A tour of the SIO2/CIMD laboratory: http://enpub.fulton.asu.edu/phy132/herbots.htm

2) N. Herbots Professional PROFILES

" Professional Profile & Activities, Companies I have founded, are listed ON LINKEDIN 

http://www.linkedin.com/profile/view?id=1398185&locale=en_US&trk=tab_pro

" Academic Profile and Updates on WWW.ACADEMIA.EDU

http://asu.academia.edu/NicoleHerbots

3) M ost recent PhD Thesis Dissertation Defended in Prof. Herbots CIMD/SiO@/IBeAM/MEIS research group, with Prof. Culbertson as co-chair:

Qian Xing Bradley defended on 4/1/11

 

 

"Modeling Mechanisms of Water Affinity and Condensation on Si-based Surfaces via Experiments and Applications" 

Based on the following five publications (as of May 2011):

(1) Ion beam analysis of silicon-based surface and correlation with surface energy measurements 

Qian Xing, N. Herbots, M. Hart, J. D. Bradley, B. J. Wilkens, D. A. Sell, Clive H. Sell, Henry M.   Kwong Jr, R. J. Culbertson, and S. D. Whaley,  

  AIP Conference Proceeding of the 21st  

International

Conference on the Application of Accelerators in

Research and Industry (CAARI), Vol . 1336

pp. 201-207 (May 2011)

 

(2) Particle-Induced X-ray Emission (PIXE) of silicate coatings on high impact resistance polycarbonates

  Qian Xing, M. A. Hart, R. J. Culbertson, J. D. Bradley, N. Herbots, Barry J. Wilkens, David A. Sell, and Clarizza F. Watson,   

 

AIP Conference Proceeding 

 on the 21st

International

 

Conference on the Application of Accelerators in Research and Industr y

 

 

 

(CAARI), Vol. 1336, pp. 303-309 (May 2011)

 

 (3) 

 

ABSTRACT

 

Water affinity and condensation on Si-based surfaces is investigated to address the problem of condensation and fogging on silicone InterOcular Lenses (IOL) used in cataract surgery, using Si(100), silica (SiO2) and PDMS silicone [(SiOCH3)n]. Condensation is described by 2-step nucleation and growth where roughness controls heterogeneous nucleation of droplets followed by Ostwald ripening.

 

Condensation with wetting on hydrophilic surfaces consists of continuous aqueous films while hydrophobic surfaces exhibit fogging with discrete droplets. Si-based surfaces with wavelength of 300 nm always exhibit condensation with fogging. Below 200 nm, surfaces are found to wet during condensation.  Water affinity of Si-based surfaces is quantified via the surface free energy (SFE) using Sessile Drop  contact angle analysis, the Young-Dupr� equation, and Van Oss theory. Topography is analyzed using tapping mode atomic force microscopy (TMAFM).

 

 

 

Polymer adsorption and ion beam modification of materials (IBMM) can be used to modify surface topography, composition, and SFE, and to alter water affinity of Si-based surfaces

 

Polymer adsorption of hydroxypropyl methylcellulose (HPMC) cellulose C32H60O19 with areal densities ranging from 1018 atom/cm2 to 1019 atom/cm2 is characterized via Rutherford backscattering spectrometry (RBS), and allows for the substrate to adopt the topography of the polymer film and its hydrophilic properties.

 

 Silica and silicone maintains bulk stoichiometry by 4.265 MeV 12C(�, �)12C and 3.045 MeV 16O(�, �)16O nuclear resonance scattering,and 2.8 MeV He elastic recoil detection (ERD) of hydrogen while He particle induced X-ray emission (PIXE) enables for the arealdensity of polymer films to be measured on Si(100), silica and  silicone.

 

The SFE and topography of Polydimethylsiloxane (PDMS) silicone polymers used for IOLs can also be modified by IBMM.

 

IBMM of HPMC cellulose occurs during IBA as well.  Damage curves and ERD are shown to characterize surface desorption accurately during IBMM so that ion beam damage can be accounted for during analysis for polymer films areal density, and composition. 

 

IBMM of Si(100)-SiO2 ordered interfaces also induces changes of SFE, as ions disorders surface atoms. The SFE converges for all surfaces, hydrophobic and hydrophilic as ions alter electrochemical properties of the surface via atomic and electronic displacements

 

CIMD/SIiO2/IBeAM/MEIS Research Group

 

Nicole Herbots and her students research and model low temperature methods of synthesis and characterization of new semiconductor nanofilms such as sub-nanometer thick ordered silicon dioxides (US Patent 6,613,677, Herbots et al.), SiGe oxides, GaAs oxides, nitrides, oxynitrides and nitrididized oxides (US patent 5,124,421, Herbots et al.), as well as SiGe, SiGeC, SiGeC nanophases. The synthesis methods used include CIMD (US Patent 4,800,200, N. Herbots et al.) which combines molecular beams, ion beam deposition, and IBO (Ion Beam Oxidation), and new low temperature surface processing techniques to produce templates for epitaxy in her clean-room laboratory.

Our three most recent research foci are

1) the synthesis of ultra-efficient, high durability, robust solar cells with extended carrier life-time, low surface recombination via direct bonding of Si(100)/glass encapsulation at T < 500 K using our patented EpONOx and QSimox process and nucleation of ordered NanOxides on OH(1x1)Si(100).

2) A NEW PHYSICS TECHNOLOGY FOR ARTIFICIAL CORNEA & PANCREAS IMPLANTS Synthesis Of Bio-materials Molecule-by-molecule In Two-dimensional Nanophases And Interphases

3) A New Epitaxial Silicon Dioxide 2-D Nanophase nucleated on OH-(1x1) Silicon(100) for C-MOS technology and new epitaxial high-k/peroskovites: SilOxSik

3) Some of our recent patents and  technology disclosures are:

 

  ISSUED 12/14/2010:  U.S. Application Patent GRANTED 11/9/2010 for U.S. Patent No. 11/741,563, Filed: April 27, 2007:  

      

 

US Patent 7,851,365  B1 , (granted 12/14/2010) .   Methods for Preparing Semiconductor Substrates and Interfacial OxidesThereon .  Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R. J. Culbertson & V. Atluri

 

 

 

 

 

 

 

 

 

 

1) ASU98-11 (11/20/1998), "Long range ordered semiconductor interface phase and oxides." Herbots, N; Co-Inventors (Graduate Students of N. Herbots): Atluri, V. P.; Bradley J.D.; Swati, Banerjee; Hurst, Q.B.; Xiang, J.

2) M6-060 (12/20/2005), "Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon" Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri MBHB Ref. No: 07-151-US ASU Ref. No.: M6-060.

3) M8-040 (10/28/2007), Single/Dual 12" Wafer Processing EPOX R&D Flexible Bench: A Single/Dual 1-16" Wafer Wet Processing Clean Room Bench for R&D and Epoxides (EPOX) Technology. " Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri

4) MP9-035 (10/1/2008) Low Temperature (below 470 K) Wafer Bonding Wet via a cross-bonding nano-interphase (SILOXSI) for biomedical and device applications (10/1/2008) " Inventor(s): N. Herbots, J. D. Bradley, M. Hart, D. A. Sell, J. M. Shaw, R.J Culbertson & V. Atluri

Our six most recent US Patents filed, of which one was granted in 9/2/2003 and the other in 11/9/2010 are 

1) US Patent 6,613,677, Herbots et al (granted 9/2/03) "Long range ordered semiconductor interface phase and oxides." 6,613,677, Main Inventor: Herbots, N; Co-Inventors (Graduate Students of N. Herbots): Atluri, V. P.; Bradley J.D.; Swati, Banerjee; Hurst, Q.B.; Xiang, J.

2) U.S. Patent Application No. 11/741,563, Filed: April 27, 2007, pending "Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon" Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri MBHB Ref. No: 07-151-US ASU Ref. No.: M6-060.

3) U.S. ApplicationPatent GRANTED 11/9/2010 for U.S. Patent Application No. 11/741,563, Filed: April 27, 2007:  Title: Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon

 

4) U. S. Patent Application Case No.: 09-971-PCT Serial No.: PCT/US10/56049 Inventors: Nicole Herbots, James Doug Bradley, Murdock  Allen, Hart, David Sell, Shawn D. Whaley and Qian Xing Bradley

Date of Execution Filing Date: November 9, 2010 Molecular Films for Hydrophobic Implant Surfaces

5)  Provisional patent Application (11/2009): Low Temperature (below 450 K) Wafer Bonding Wet via a cross-bonding nano-interphase (SILOXSI) for biomedical and device application, including an EpOxNox processing tools (10/1/2008) " Inventor(s): N. Herbots, J. D. Bradley, M. Hart, D. A. Sell, J. M. Shaw, R.J Culbertson & V. Atluri MP9-035 (10/1/2008), M8-040 (10/28/07),

6) ON 04/30/2010  Case No.: 08-1316-PCT Serial No.: PCT/US10/33301  

 

 

 

 

 

 

 

Methods for Wafer Bonding, and for Nucleating Bonding Nanophases 

Inventors: Nicole Herbots, Robert J. Culbertson, James Bradley, Murdock Allen Hart, David Alexander Sell and Shawn David Whaley Date of Execution Filing Date: April 30, 2010

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

     

 

 

 

 

 

 

 

 

Publications

  • K Queeney, Nicole Herbots, Justin Shaw, V Atluri, Y Chabal. Infrared spectroscopic analysis of an ordered Si/SiO2 interface. Applied Physics Letters (2004).
  • Nicole Herbots, V Atluri, P Vasudeva, James Swati, B Quinton, Jiong Xiang, Hurst Banerjee. Long range ordered semiconductor interface phase and oxides. US Patent office (2003).

Research Activity

Courses

Fall 2018
Course Number Course Title
PHY 492 Honors Directed Study
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
Summer 2018
Course Number Course Title
PHY 495 Project Research
PHY 592 Research
PHY 792 Research
Spring 2018
Course Number Course Title
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Fall 2017
Course Number Course Title
PHY 492 Honors Directed Study
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Summer 2017
Course Number Course Title
PHY 495 Project Research
PHY 792 Research
Spring 2017
Course Number Course Title
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Fall 2016
Course Number Course Title
PHY 492 Honors Directed Study
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Summer 2016
Course Number Course Title
PHY 495 Project Research
PHY 792 Research
Spring 2016
Course Number Course Title
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Fall 2015
Course Number Course Title
PHY 492 Honors Directed Study
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Summer 2015
Course Number Course Title
PHY 495 Project Research
PHY 792 Research
Spring 2015
Course Number Course Title
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Fall 2014
Course Number Course Title
PHY 492 Honors Directed Study
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation
Summer 2014
Course Number Course Title
PHY 495 Project Research
PHY 792 Research
Spring 2014
Course Number Course Title
PHY 493 Honors Thesis
PHY 495 Project Research
PHY 499 Individualized Instruction
PHY 792 Research
PHY 799 Dissertation

Presentations

  • Herbots, Nicole. Foundation Concepts in Physics: Initial Model Building in Mechanics & (2) Electro-magnetism for science majors. First STEM Knowledge Sharing and Consensus Building Workshop, June 22-29, 2004, ASU (Jun 2005).
  • Bradley, J, Herbots, Nicole, Shaw, J, Atluri, V, Queeney, K, Chabal, Y. Ordered SiO2 phase grown on (1x1) OH-Si(100): Infrared spectroscopy, ion beam analysis and modeling. 32nd Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan 23-27,2005, Bozeman

Service

  • Delta Upsilon Fraternity at Arizona State University, Faculty Advisor (2004 - 2006)
  • Tempe Campus Academic Standards Committee, Chair (2004 - 2006)
  • Physics Education Research Search Committee, Member (2004 - 2005)
  • Tri-City JCC Day School, Art Masterpiece Presenter - The connection between Art & Science (2004 - 2005)
  • APS Four Corner Meeting, October 2003, Session Chair (2003)
  • On leave, On leave (2003)
  • Physcial Review Letters; Applied Physics Letters, Journal of Vaccum Science and Technollogy, Reviewer (2003)
  • Tri-City JCC Day School, Art Masterpiece Presenter - The connection between Art & Science (2003)
  • Tri-City JCC Day-School, Physics Outreach: Presenter and Interviewee as a Career Scientist (2003)